ROHM Semiconductor SCS312AGC16 SiC肖特基二极管 RECT SBD 650V 12A SIC

Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 12 A

Ir - Reverse Current: 60 uA

Vf - Forward Voltage: 1.5 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 78 W

Ifsm - Forward Surge Current: 96 A

Maximum Operating Temperature: + 175 C

Vrrm - Repetitive Reverse Voltage: 650 V