ROHM Semiconductor UM6K1NTN MOSFET 2N-CH 30V .1A SOT-363

Width: 1.25 mm

Height: 0.9 mm

Length: 2 mm

Fall Time: 80 ns

Rise Time: 35 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 80 ns

Id - Continuous Drain Current: 100 mA

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 20 mS

Rds On - Drain-Source Resistance: 8 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V