STMicroelectronics BD682 达灵顿晶体管 PNP 功率达灵顿

Width: 2.7 mm

Height: 10.8 mm

Length: 7.8 mm

Unit Weight: 640 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 40 W

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 750

Maximum Collector Cut-off Current: 200 uA

Collector- Emitter Voltage VCEO Max: 100 V