STMicroelectronics BU931T 达林顿晶体管 NPN 功率达林顿

Unit Weight: 6 g

Configuration: Single

Qualification: AEC-Q100

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 125 W

Emitter- Base Voltage VEBO: 5 V

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 300 at 5 A, 10 V

Maximum Collector Cut-off Current: 100 uA

Collector- Emitter Voltage VCEO Max: 400 V