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Width: 2.7 mm
Height: 10.8 mm
Length: 7.8 mm
Technology: Si
Unit Weight: 60 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 20.8 W
DC Current Gain hFE Max: 240
Emitter- Base Voltage VEBO: 3 V
Collector- Base Voltage VCBO: 300 V
Continuous Collector Current: 500 mA
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 30
Collector- Emitter Voltage VCEO Max: 300 V
Collector-Emitter Saturation Voltage: 500 mV
