STMicroelectronics PD55025TR-E 射频功率MOSFET 射频功率晶体管 N沟道

Gain: 14.5 dB

Technology: Si

Output Power: 25 W

Configuration: Single Common Source

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Operating Frequency: 500 MHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 40 V

Id - Continuous Drain Current: 7 A

Maximum Operating Temperature: + 165 C

Vds - Drain-Source Breakdown Voltage: 12.5 V