STMicroelectronics PD57018S-E MOSFET射频功率晶体管，N沟道增强型，横向

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 31.7 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 165 C

Minimum Operating Temperature: - 65 C

Forward Transconductance - Min: 1 S

Rds On - Drain-Source Resistance: 760 mOhms

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 2 V