STMicroelectronics PD85035-E 射频功率MOSFET功率射频N沟道晶体管

Gain: 14.9 dB

Technology: Si

Unit Weight: 1.140 g

Channel Mode: Enhancement

Output Power: 35 W

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Operating Frequency: 870 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 95 W

Vgs - Gate-Source Voltage: - 500 mV, + 15 V

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 165 C

Minimum Operating Temperature: - 65 C

Vds - Drain-Source Breakdown Voltage: 40 V