STMicroelectronics SD57030 射频功率MOSFET N沟道 65伏 4安

Gain: 13 dB

Width: 6.1 mm

Height: 4.45 mm

Length: 20.57 mm

Technology: Si

Unit Weight: 3 g

Channel Mode: Enhancement

Output Power: 30 W

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Operating Frequency: 1 GHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 74 W

Vgs - Gate-Source Voltage: + 20 V

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Forward Transconductance - Min: 1.8 S

Vds - Drain-Source Breakdown Voltage: 65 V