STMicroelectronics ST901T 达林顿晶体管 NPN 功率达林顿

Width: 4.6 mm

Height: 9.15 mm

Length: 10.4 mm

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Emitter- Base Voltage VEBO: 5 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 500

Collector- Emitter Voltage VCEO Max: 350 V