STMicroelectronics STB13N80K5 MOSFETs N-CH 800V 0.37欧姆 12A MDmesh K5

Fall Time: 16 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 29 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 190 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 42 ns

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 450 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 4 V