STMicroelectronics STB300NH02L Power MOSFET

Type: Power MOSFET

Vgs(th): 2 V

Vgs (Max): 20V

Gate Charge (Qg): 109.4nC

Power consumption: 300W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 24V

Continuous drain current: 120A

Input Capacitance (Ciss): 7055pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 1.8mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V