STMicroelectronics STB60NF06T4 N沟MOSFET 60伏 60安

Width: 9.35 mm

Height: 4.6 mm

Length: 10.4 mm

Fall Time: 20 ns

Rise Time: 108 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 66 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 110 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 43 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Forward Transconductance - Min: 20 S

Rds On - Drain-Source Resistance: 15 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2 V