STMicroelectronics STB80NF55-06-1 N沟MOSFET，55V-0.005欧姆 80A

Width: 4.4 mm

Height: 8.95 mm

Length: 10 mm

Fall Time: 65 ns

Rise Time: 155 ns

Technology: Si

Unit Weight: 2.387 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 189 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 27 ns

Typical Turn-Off Delay Time: 125 ns

Id - Continuous Drain Current: 80 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 6.5 mOhms

Vds - Drain-Source Breakdown Voltage: 55 V

Vgs th - Gate-Source Threshold Voltage: 2 V