STMicroelectronics STD12N60M2 MDmesh M2 N沟道 600 V，典型0.395欧姆 9 A MDmesh M2 功率MOSFET，DPAK封装

Width: 6.6 mm

Height: 2.4 mm

Length: 6.2 mm

Fall Time: 18 ns

Rise Time: 9.2 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 16 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 85 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 9.2 ns

Typical Turn-Off Delay Time: 56 ns

Id - Continuous Drain Current: 9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 395 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4 V