STMicroelectronics STD3N62K3 N沟道620V，2.7A SuperMESH MOSFET

Width: 6.2 mm

Height: 2.4 mm

Length: 6.6 mm

Fall Time: 15.6 ns

Rise Time: 6.8 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 45 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 22 ns

Id - Continuous Drain Current: 2.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.5 Ohms

Vds - Drain-Source Breakdown Voltage: 620 V

Vgs th - Gate-Source Threshold Voltage: 3 V