STMicroelectronics STE250NS10 Power MOSFET

Type: Power MOSFET

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 900nC

Power consumption: 500W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 100V

Continuous drain current: 220A

Input Capacitance (Ciss): 31000pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 5.5mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V