STMicroelectronics STE70NM60 N沟MOSFET 600伏 70安

Width: 25.5 mm

Height: 9.1 mm

Length: 38.2 mm

Fall Time: 76 ns

Rise Time: 95 ns

Technology: Si

Unit Weight: 28 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 266 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 600 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 55 ns

Id - Continuous Drain Current: 70 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Forward Transconductance - Min: 35 S

Rds On - Drain-Source Resistance: 55 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3 V