STMicroelectronics STF20N65M5 MOSFET N沟道 650 V 0.168 欧姆 18 A MDmesh M5

Fall Time: 7.5 ns

Rise Time: 7.5 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 36 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 130 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Id - Continuous Drain Current: 18 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 190 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V