STMicroelectronics STF31N65M5 MOSFETs N沟道 650V 0.124欧姆 22安 MDmesh

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 30 W

Id - Continuous Drain Current: 13.9 A

Rds On - Drain-Source Resistance: 148 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V