STMicroelectronics STFW3N170 MOSFET N沟道 1700 V，7 欧姆典型值 2.6 A，PowerMESH 功率 MOSFET，TO-3PF 封装

Fall Time: 53 ns

Rise Time: 9 ns

Technology: Si

Unit Weight: 5.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 44 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 63 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 51 ns

Id - Continuous Drain Current: 2.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7 Ohms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 3 V