STMicroelectronics STGD5NB120SZT4 IGBT晶体管 N沟道 1200伏 5安

Width: 6.2 mm

Height: 2.4 mm

Length: 6.6 mm

Technology: Si

Unit Weight: 4 g

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 55 W

Continuous Collector Current: 5 A

Gate-Emitter Leakage Current: +/- 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 10 A

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 10 A