STMicroelectronics STGW75H65DFB2-4 IGBT晶体管沟槽栅场停止，650 V，75 A，高速HB2系列

Technology: Si

Unit Weight: 4.430 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 357 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 115 A