STMicroelectronics STL120N8F7 MOSFET N沟道 80 V，3.7 mOhm 典型值 120 A STripFET F7 功率MOSFET

Width: 5.2 mm

Height: 1 mm

Length: 6.15 mm

Fall Time: 15.4 ns

Rise Time: 16.8 ns

Technology: Si

Unit Weight: 76 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 60 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 140 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 34.5 ns

Typical Turn-Off Delay Time: 60 ns

Id - Continuous Drain Current: 120 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4.4 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 4 V