STMicroelectronics STL50DN6F7 MOSFET 双N沟道 60 V，典型9 mOhm 57 A STripFET F7 功率MOSFET

Fall Time: 8 ns

Rise Time: 15.3 ns

Technology: Si

Unit Weight: 76 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 17 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 62.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 14.5 ns

Typical Turn-Off Delay Time: 19.4 ns

Id - Continuous Drain Current: 57 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 11 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2 V