STMicroelectronics STP10N105K5 MOSFET N沟道 1050 V，典型1欧姆 6 A MDmesh K5 功率，TO-220封装

Fall Time: 21.5 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 21.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 130 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 19 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.3 Ohms

Vds - Drain-Source Breakdown Voltage: 1.05 kV

Vgs th - Gate-Source Threshold Voltage: 4 V