STMicroelectronics STP23NM60N Power MOSFET

Type: Power MOSFET

Vgs(th): 4 V

Vgs (Max): 25V

Gate Charge (Qg): 60nC

Power consumption: 150W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 19A

Input Capacitance (Ciss): 2050pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 180mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V