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Type: Power MOSFET
Vgs(th): 4 V
Vgs (Max): 30V
Gate Charge (Qg): 91nC
Power consumption: 190W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 600V
Continuous drain current: 25A
Input Capacitance (Ciss): 2700pF
Operating temperature range: 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 130mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
