STMicroelectronics STP36NF06L N沟MOSFET 60伏 30安

Width: 4.6 mm

Height: 9.15 mm

Length: 10.4 mm

Fall Time: 13 ns

Rise Time: 80 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: Through Hole

Transistor Type: 1 N-Channel Power MOSFET

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 70 W

Vgs - Gate-Source Voltage: - 18 V, + 18 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 19 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 15 S

Rds On - Drain-Source Resistance: 40 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1 V