STMicroelectronics STP4NB100 Power MOSFET

Type: Power MOSFET

Vgs(th): 5 V

Vgs (Max): 30V

Gate Charge (Qg): 45nC

Power consumption: 125W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 1000V

Continuous drain current: 3.8A

Input Capacitance (Ciss): 1400pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 4.4Ohm

Drive Voltage (Max Rds On, Min Rds On): 10V