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Type: Power MOSFET
Vgs(th): 4 V
Vgs (Max): 30V
Gate Charge (Qg): 21nC
Power consumption: 80W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 500V
Continuous drain current: 3.8A
Input Capacitance (Ciss): 400pF
Operating temperature range: 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 2.8Ohm
Drive Voltage (Max Rds On, Min Rds On): 10V
