STMicroelectronics STRH12P10GYG 单个MOSFET
ModelSTRH12P10GYG
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Channel Type: P Channel
Power Dissipation: 75
Transistor Mounting: Through Hole
Transistor Case Style: TO-257AA
Drain Source Voltage Vds: 100
Operating Temperature Max: 150 °C
Continuous Drain Current Id: 12
Drain Source On State Resistance: 300
Gate Source Threshold Voltage Max: 4.5
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