STMicroelectronics STS2DNF30L N沟MOSFET 30伏 3安

Width: 4 mm

Height: 1.65 mm

Length: 5 mm

Fall Time: 8 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 74 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 4.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.6 W

Vgs - Gate-Source Voltage: - 18 V, + 18 V

Typical Turn-On Delay Time: 19 ns

Typical Turn-Off Delay Time: 12 ns

Id - Continuous Drain Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 90 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V