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Width: 3.8 mm
Height: 4.5 mm
Length: 4.8 mm
Technology: Si
Unit Weight: 250 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1.5 W
DC Current Gain hFE Max: 8 at 500 mA, 2 V
Emitter- Base Voltage VEBO: 9 V
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 8
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 1.5 V
