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Width: 4.7 mm
Height: 16.51 mm
Length: 10.67 mm
Fall Time: 6 ns
Rise Time: 16 ns
Technology: Si
Unit Weight: 2 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 76 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 100 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 262 S
Rds On - Drain-Source Resistance: 3.1 mOhms
Vds - Drain-Source Breakdown Voltage: 80 V
Vgs th - Gate-Source Threshold Voltage: 2.6 V
