Texas Instruments CSD22202W15 MOSFETs P-CH NexFET 功率 MOSF ET

Width: 1.5 mm

Height: 0.62 mm

Length: 1.5 mm

Fall Time: 38 ns

Rise Time: 8.4 ns

Technology: Si

Unit Weight: 2.500 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 6.5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Typical Turn-On Delay Time: 10.4 ns

Typical Turn-Off Delay Time: 109 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 17.4 mOhms

Vds - Drain-Source Breakdown Voltage: 8 V

Vgs th - Gate-Source Threshold Voltage: 800 mV