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Vgs(th): 0.95V
Vgs (Max): -6V
Gate Charge (Qg): 24.6nC
Power consumption: 1.7W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 8V
Continuous drain current: 5A
Input Capacitance (Ciss): 1130pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 9.9mOhm
Drive Voltage (Max Rds On, Min Rds On): 2.5|4.5V
