Texas Instruments CSD23382F4 MOSFETs P型MOSFET A 595-CSD23382F4T

Width: 0.64 mm

Height: 0.35 mm

Length: 1 mm

Fall Time: 41 ns

Rise Time: 25 ns

Technology: Si

Unit Weight: 0.400 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: CSD1FPCHEVM-890

Transistor Type: 1 P-Channel

Qg - Gate Charge: 1.04 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 28 ns

Typical Turn-Off Delay Time: 66 ns

Id - Continuous Drain Current: 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.4 S

Rds On - Drain-Source Resistance: 76 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 500 mV