Texas Instruments CSD25302Q2 Power MOSFET

Type: Power MOSFET

Vgs(th): 0.9V

Vgs (Max): 8V

Gate Charge (Qg): 3.4nC

Power consumption: 2.4W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 5A

Input Capacitance (Ciss): 350pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 49mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V