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Width: 5 mm
Height: 1.5 mm
Length: 6 mm
Fall Time: 2.3 ns, 4.7 ns
Rise Time: 17 ns, 10 ns
Technology: Si
Unit Weight: 162 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Development Kit: TPS53819AEVM-123
Transistor Type: 2 N-Channel
Qg - Gate Charge: 8.4 nC, 20 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 12 W
Vgs - Gate-Source Voltage: - 5 V, + 5 V
Typical Turn-On Delay Time: 7 ns, 8 ns
Typical Turn-Off Delay Time: 13 ns, 33 ns
Id - Continuous Drain Current: 40 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 97 S, 157 S
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V, 750 mV
