Texas Instruments CSD87350Q5D 同步降压MOSFET驱动器 同步降压NexFET功率模块

Width: 5 mm

Height: 1.5 mm

Length: 6 mm

Fall Time: 2.3 ns, 4.7 ns

Rise Time: 17 ns, 10 ns

Technology: Si

Unit Weight: 162 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Development Kit: TPS53819AEVM-123

Transistor Type: 2 N-Channel

Qg - Gate Charge: 8.4 nC, 20 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 12 W

Vgs - Gate-Source Voltage: - 5 V, + 5 V

Typical Turn-On Delay Time: 7 ns, 8 ns

Typical Turn-Off Delay Time: 13 ns, 33 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 97 S, 157 S

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V, 750 mV