Texas Instruments CSD87353Q5D MOSFETs 30V 同步降压 NexFET 电源模块

Width: 5 mm

Height: 1.5 mm

Length: 6 mm

Fall Time: 4 ns, 4.6 ns

Rise Time: 16 ns, 10 ns

Technology: Si

Unit Weight: 316.400 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 16 nC, 20 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 12 W

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Typical Turn-On Delay Time: 10 ns, 8.5 ns

Typical Turn-Off Delay Time: 20 ns, 23 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 135 S, 160 S

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V, 750 mV