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Width: 9.39 mm
Height: 4.7 mm
Length: 9.39 mm
Fall Time: 20 us
Rise Time: 20 us
Output Type: NPN Phototransistor
Configuration: 1 Channel
Mounting Style: Through Hole
Isolation Voltage: 1000 Vrms
Number of Channels: 1 Channel
If - Forward Current: 1 mA
Vf - Forward Voltage: 1.5 V
Vr - Reverse Voltage: 2 V
Current Transfer Ratio: 200 %
Pd - Power Dissipation: 300 mW
Maximum Collector Current: 50 mA
Current Transfer Ratio - Max: 1000 %
Current Transfer Ratio - Min: 200 %
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
Maximum Collector Emitter Voltage: 40 V
Collector-Emitter Breakdown Voltage: 40 V
Maximum Collector Emitter Saturation Voltage: 300 mV
