Vishay General Semiconductor VS-GT150YG120NT IGBT模块

Technology: Si

Configuration: Quad

Mounting Style: Press Fit

Pd - Power Dissipation: 892 W

Gate-Emitter Leakage Current: 1 uA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current at 25 C: 244 A