Vishay General Semiconductor VS-GT400TH60N IGBT模块输出与SW模块 - DIAP IGBT

Technology: Si

Configuration: Half Bridge

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.6 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 530 A