Vishay Siliconix IRFDC20PBF MOSFETs HVMDIP 600V .32A N沟MOSFET

Technology: Si

Unit Weight: 894.062 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 18 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.3 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 320 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4.4 Ohms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 2 V