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FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 270mW
Operating temperature: -55 to 150C
Drain to Source voltage: 20V
Continuous drain current: 660mA/410mA
Current - Drain (Id) (25°C): 660mA|410mA
Field-effect transistor type: N and P-Channel
Gate Charge - (when applying Vgs): 1.2nC@4.5V
Drain to Source on-state resistance: 385mOhm
On Voltage - (Vgs when Id is applied): 600mV@250uA(Min)
On Resistance - (Rds when Id,Vgs is applied): 385mOhm@660mA|4.5V
