Vishay SI1988DH-T1-E3 MOSFET

FET Feature: Logic Level Gate

Mounting Type: Surface Mount

Power-Maximum: 1.25W

Operating temperature: -55 to 150C

Drain to Source voltage: 20V

Continuous drain current: 1.3A

Current - Drain (Id) (25°C): 1.3A

Field-effect transistor type: 2N-Channel(Dual)

Gate Charge - (when applying Vgs): 4.1nC@8V

On Voltage - (Vgs when Id is applied): 1V@250uA

On Resistance - (Rds when Id,Vgs is applied): 168mOhm@1.4A|4.5V

Input Capacitance - (Ciss when Vds is applied): 110pF@10V