Vgs(th): 0.8V
Gate Charge (Qg): 15nC
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 8V
Continuous drain current: 3.5A
Input Capacitance (Ciss): 1245pF
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 52mOhm
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