Vishay SI4384DY-T1-E3 MOSFET

Vgs(th): 3 V

Vgs (Max): 20V

Gate Charge (Qg): 18nC

Power consumption: 1.47W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 10A

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 8.5mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V