Vishay SI4900DY-T1-E3 MOSFET

FET Feature: Logic Level Gate

Mounting Type: Surface Mount

Power-Maximum: 3.1W

Operating temperature: -55 to 150C

Drain to Source voltage: 60V

Current - Drain (Id) (25°C): 5.3A

Field-effect transistor type: 2N-Channel(Dual)

Gate Charge - (when applying Vgs): 20nC@10V

On Voltage - (Vgs when Id is applied): 3V@250uA

On Resistance - (Rds when Id,Vgs is applied): 58mOhm@4.3A|10V

Input Capacitance - (Ciss when Vds is applied): 665pF@15V